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NIL, IMS collaborate on nanoimprint litho

Posted: 29 Jan 2009 ?? ?Print Version ?Bookmark and Share

Keywords:lithography nanoimprint? collaboration EBL? lithography electron beam?

NIL Technology and IMS Chips announced that they have started a collaboration on the fabrication of stamps for nanoimprint lithography (NIL) by combining their electron beam lithography (EBL) expertise. The companies have started a collaboration to efficiently combine their capabilities related to electron beam lithography.

While NIL Technology possesses key competences within production of stamps for NIL through the operation of a Gaussian shaped electron beam writer, IMS Chips has developed various patterning technologies for wafers, masks and stamps using a variable shape electron beam writer.

The direct access to both Gaussian shaped and variable shaped EBL puts the collaborators in a position to combine high-speed and high-resolution definition of nanostructures. Complex stamps for NIL can be produced with very high quality at competitive prices. The unique combination of these EBL technologies put the two companies in the same league as less than a handful of other companies around the world that also use combined EBL.

"We see this collaboration as a giant step on our path to fulfill the present and future requirements from many companies working with NIL," said Theodor Kamp Nielsen, CEO of NIL Technology and Mathias Irmscher, head of IMS Chips' nanopatterning division. "They are moving towards more complex designs that require more and more complex NIL stamps and solutions. The combined use of both state-of-the-art EBL technologies enables us to continue supporting our customers with world-class solutions."





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