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Carl Zeiss embarks on microscopy project

Posted: 02 Mar 2009 ?? ?Print Version ?Bookmark and Share

Keywords:microscopy transmission electron? project SALVE?

Carl Zeiss SMT is gearing up for one of the most ambitious electron microscopy development efforts to be undertaken in recent years. Together with the University of Ulm and CEOS (Heidelberg), Carl Zeiss has initiated a development partnership for low-voltage transmission electron microscopy. A total of 11.5 million euros are available to the project, which is initially intended to run for a period of five years. The German Research Foundation (DFG) is contributing 4.2 million euros. Carl Zeiss is supporting the project with funds totaling 3.7 million euros.

The joint project goes by the name SALVE, which stands for Sub-Angstrom Low Voltage Electron microscopy. The objective is to develop transmission electron microscopes (TEM) that will image samples with atomic resolution using relatively low accelerating voltageas compared to the current generation of medium-voltage TEMs that destroy radiation-sensitive samples before useable images can be recorded. The results of the development project will open up many new scientific and technological frontiers, according to the participants.

The task of building the correctors has been given to Heidelberg-based CEOS GmbH which specializes in the construction of such sub- systems. CEOS has already proven its capabilities to develop such advanced electron optical systems in various projects. Teams at the University of Ulm will develop applications and examine methods of specimen preparation parallel to the development of the system at Carl Zeiss.

Remarked project manager Ute Kaiser, professor at University of Ulm, "This new high-performance microscope will enable us for the first time to image electron-beam-sensitive samples and monitor molecular processes that contribute to decoding chemical conversions. Knowledge of these processes is vital for many areas of application in materials sciences, biomedical research and in semiconductor technology."

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