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Power transistors achieve 2m? on-resistance

Posted: 31 Mar 2009 ?? ?Print Version ?Bookmark and Share

Keywords:power transistor? on-resistance lowest? DC/DC converter?

30V power transistors

STMicroelectronics has introduced a new series of 30V surface-mount power transistors, achieving on-resistance as low as 2m? (max) to increase the energy efficiency of products such as computers, telecom and networking equipment.

Using its latest-generation STripFET VI DeepGATE process, which has high equivalent cell density, ST has claims to have achieved the best RDS(ON) in relation to active chip size. This is around 20 percent better than the previous generation and allows the use of small surface-mount power packages in switching regulators and DC/DC converters. The technology also benefits from inherently low gate charge, which allows engineers to use high switching frequencies and thereby specify smaller passive components such as inductors and capacitors.

The broad choice of industry-standard outlines, including SO-8, DPAK, 5mm x 6mm PowerFLAT, 3.3mm x 3.3mm PowerFLAT, PolarPAK, through-hole IPAK and SOT23-6L, offer compatibility with existing pad/pin layouts at the same time as improving efficiency and power density. This will maximize market opportunities for ST's STripFET VI DeepGATE family.

The first devices introduced using this new process include the STL150N3LLH6, which offers the lowest RDS(ON) per area in the 5mm x 6mm PowerFLAT package. The STD150N3LLH6 has also been introduced, in the DPAK package, with an Rds(on) of 2.4m?.

Samples are available for both devices, with production availability scheduled June 2009. Prices start at $0.95 for the STD150N3LLH6 and $1.20 for the STL150N3LLH6, in quantities of 2,500 pieces.





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