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Samsung ramps up 50nm DDR3 production

Posted: 23 Apr 2009 ?? ?Print Version ?Bookmark and Share

Keywords:Samsung DDR3? 50nm memory? Xeon Intel?

Samsung Electronics Co. Ltd is ramping up 50nm class production of DDR3 memory chips in response to increased demand stemming from Intel Corp.'s launch of the Xeon processor 5500 series.

DDR3 is the third generation of DDR synchronous memory. Samsung and others believe that DDR3 will become the mainstream DRAM technology by the end of this year. Some analysts, including Edwin Mok of Needham & Co. LLC, have suggested that DDR3 will not capture meaningful market share this year.

Samsung said its DDR3 enables OEMs to design servers that use up to 192Gbyte per system and provides a 60 percent improvement in lower power consumption with double the system (speeds up to 133Mbit/s) performance compared with its predecessor, DDR2.

"In conjunction with use of the Xeon processor 5500 series, DDR3 has the potential to dramatically improve the efficiency of data transactions in virtually any enterprise server application," said Jim Elliott, VP of memory marketing for Samsung's U.S. subsidiary, Samsung Semiconductor Inc., in a statement.

Intel last month formerly rolled out server versions of its 45nm Nehalem processors. The Xeon 5500 chips integrate memory #LINKKEYWORD2# and a high-speed interconnect.

Forty 50nm class Samsung DDR3 solutions have been validated to work with the Intel 5500 platform, the company said. The Samsung DDR3 devices that have passed Intel's validation program include 1- and 2Gbit DRAM chips, as well as 1-, 2-, 4-, 8- and 16Gbyte registered DIMMs and 1-, 2- and 4Gbyte unbuffered DIMMs, according to the company.

Newly validated DDR3 chips are available at speeds of 800-, 1066- and 1333Mbit/s and can offer up to a 40 percent power savings at 1333Mbit/s, compared to 60nm-class DDR3 chips, Samsung said.

- Dylan McGrath
EE Times





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