20V MOSFET claims lowest R_DS(ON)

From Fairchild Semiconductor comes a 20V 2mm x 2mm x 0.55mm thin MicroFET MOSFET that claims to provide the lowest R_DS(ON).

The FDMA6023PZT is a dual p-channel MOSFET in a compact, low profile package that answers the portable design challenge requirements for thinner and smaller applications that are equipped with technology that conserves battery life. The FDMA6023PZT is packaged in an ultrathin, lead-frame exposed MicroFET package with high thermal resistance, delivering superb power dissipation and reducing conduction losses compared to conventional MOSFETs. This device is designed with Fairchild's PowerTrench MOSFET process technology. This technology yields low values for R_DS(ON), total gate charge and Miller Charge—enhancements that result in superior conduction and switching performance.

The FDMA6023PZT is part of a portfolio of MicroFET MOSFETs that are pivotal in addressing the power design challenges in feature-rich portable applications. This portfolio includes the FDMA1027PT, a 20V p-channel PowerTrench MOSFET, and the FDFMA2P853T, a 20V p-channel PowerTrench MOSFET with a Schottky #LINKKEYWORD0#. These products are 55 percent smaller and 50 percent lower in height than 3mm x 3mm x 1.1mm MOSFETs typically used in low-voltage designs.

Delivery is eight to ten weeks ARO.

Samples of the FDMA6023PZT are available. Pricing starts at $0.48 each in 1,000 quantities.