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1Gbit mobile DRAM touts high speed at low power

Posted: 29 Apr 2009 ?? ?Print Version ?Bookmark and Share

Keywords:mobile DRAM? DDR2? 54nm process?


Hynix Semiconductor Inc. has developed the first mobile 1Gbit DDR2 DRAM using 54nm process technology.

By successfully developing a 50nm-class process, Hynix has overcome the challenge of producing mobile DRAMs with both high speed and low power consumption features.

The device is offered at a maximum speed of 1066MHz, and with 32bit I/O, boasts bandwidth of 4.26GBps on a single channel device and 8.52GBps on a dual channel. Hynix's 'One Chip Solution' design, offers the customer flexible options with 2- or 4bit prefetch, and 16- or 32bit I/O on a single chip. Additionally, Hynix's new mobile DDR2 is an eco-friendly device since it consumes only 50 percent of power compared to the previous generation mobile DDR, and 30 percent compared to standard DDR2 DRAM.

The product complies with the JEDEC standards, and is well-suited for next-generation mobile applications such as mobile Internet devices, netbooks and high-end smart phones requiring high bandwidth and extended battery life.

The product is available in JEDEC standard packages and also in custom packages to meet a wide range of user requirements.

Hynix plans to start mass production of this product in the second half of this year to satisfy the increasing demand for high performance mobile applications.

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