Ultrasmall MOSFET touts lowest on-resistance

Vishay Intertechnology Inc. has released a new dual 20V p-channel TrenchFET Gen III power MOSFET with the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK SC-70 2mm x 2mm footprint area.

With the SiA921EDJ, Vishay extends its p-channel TrenchFET Gen III technology to ultrasmall packages for handheld electronics. The new device will be used for DC/DC converters, as well as load, power amplifier and battery switches in portable devices such as cellphones, #LINKKEYWORD2#, PDAs and MP3 players. The lower on-resistance of the SiA921EDJ translates into lower power consumption, saving power and prolonging battery life between charges in these devices.

The SiA921EDJ offers an ultralow on-resistance of 59m? at 4.5V and 98m? at 2.5 V. The low on-resistance of the TrenchFET Gen III MOSFET translates into lower conduction losses, allowing the device to perform switching tasks with less power than any previous dual p-channel power MOSFETs on the market.

The closest competing p-channel device with a ≥12V gate-to-source rating features on-resistance of 95m? at a 4.5V gate drive and 141m? at 2.5V. These values are 38 and 44 percent higher, respectively, than the SiA921EDJ. The compact 2mm x 2mm footprint of the PowerPAK SC-70 is half the size of the TSOP-6, while offering comparable on-resistance.

The MOSFET is halogen-free in accordance with IEC 61249-2-21.

Samples and production quantities of the new SiA921EDJ TrenchFET power MOSFET are available now, with lead times of 10 to 12 weeks for larger orders.