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Memory/Storage??

T-RAM, Globalfoundries tie-up on embedded memory

Posted: 25 May 2009 ?? ?Print Version ?Bookmark and Share

Keywords:embedded memory? 32nm? memory T-RAM?

T-RAM Semiconductor Inc. and Globalfoundries have entered into a joint development agreement targeted toward the application of T-RAM's Thyristor-RAM embedded memory to advanced technology nodes.

According to Gregg Bartlett, senior VP of technology and R&D at Globalfoundries, "We are pleased to be jointly developing T-RAM memory for 32nm and 22nm technologies. T-RAM's embedded memory technology shows a great deal of potential for use in low-power, high-performance dense cache applications for advanced technology nodes."

Sam Nakib, president and CEO of T-RAM, added, "We are excited about working with Globalfoundries on the next generation embedded memory technology. T-RAM has successfully completed extensive development of the Thyristor-RAM technology and has delivered a fully manufacturable and robust memory solution with proven yield, reliability, and low-cost of integration in earlier technology nodes. We believe that Globalfoundries and their customers' products provide a great opportunity to further develop and show-case T-RAM's significant performance and economic advantages. T-RAM's revolutionary Thyristor-RAM memory technology provides the highest combination of density and performance among all embedded memory technology candidates, and avoids the fundamental scalability challenges that face 6T-SRAM and other FET-based memory cells."





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