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Cree inks transistor supply deal with Korea firm

Posted: 08 Jun 2009 ?? ?Print Version ?Bookmark and Share

Keywords:amplifier? GaN-on-SiC? transistor?

Cree Inc. has signed a definitive agreement with RFHIC Corp. to supply GaN-on-SiC transistors to the South Korean company's GaN HEMT amplifier product families.

The companies have also entered into a market development agreement to facilitate deeper market penetration of GaN HEMT solutions by leveraging Cree's expertise in GaN transistor production on SiC and its MMIC foundry capability and RFHIC's leadership position in innovative packaging, amplifier integration and volume assembly capabilities.

"This important relationship is designed to allow both Cree and RFHIC to expand their market presence and accelerate the insertion of GaN HEMT technology into a number of key, volume applications," said Cengiz Balkas, VP and general manager of Cree's power and RF business unit.

"The combination of Cree's and RFHIC's core strengths can accelerate GaN HEMT market penetration in cellular infrastructure, two-way communication, CATV amplifier, and a variety of other emerging market segments. It provides a wide range of options in hardware integration levels to best address customer needs," said Jim Milligan, director of RF and microwave products at Cree.

"Cree's GaN-on-SiC HEMT process is the most mature GaN HEMT process in the market. We initially pursued a GaN-on-Si HEMT approach but converted our product line and future direction to Cree's GaN-on-SiC HEMT technology based on its superior thermal and electrical characteristics as well as its outstanding robustness and reliability. RFHIC aims to offer cost-effective, GaN HEMT amplifier solutions to the market, and Cree GaN-on-SiC HEMT is the clear winner for our product plans," commented Samuel Cho, RFHIC's chief technology officer.

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