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NAND flash performance improvement using internal data move

Posted: 09 Jun 2009 ?? ?Print Version ?Bookmark and Share

Keywords:NAND flash? improvement performance? internal move data?

Micron offers a NAND flash feature known as internal data move (IDM). Memory devices equipped with IDM provide more sophisticated data management capabilities and higher system performance when designed in audio, video and mobile applications. In these applications, NAND flash data is typically moved within the NAND flash array for block management purposes.

In traditional NAND flash devices, moving a block of data from one memory location to another requires the data to be read from the device externally, page by page. Then each page of NAND flash data is post-processed for error correction. The data is finally reprogrammed to the new (and presumably erased) memory location in the NAND flash array. This process is time-consuming, precludes other functions in the memory subsystem, uses excessive computing power and slows system performance.

The Micron IDM feature provides an alternative to this traditional solution in that IDM eliminates the extra steps required for external data movement. IDM makes it possible to move the same page of data internally, without any external read or write processes. Moving data internally saves time, reduces power consumption, and increases performance. This technical note provides instructions for using the IDM feature in Micron NAND flash memory.

View the PDF document for more information.

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