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Toshiba, NEC join IBM alliance at 28nm tech

Posted: 22 Jun 2009 ?? ?Print Version ?Bookmark and Share

Keywords:28nm process? high-k metal gate? IBM alliance? CMOS?

NEC Electronics Corp. and Toshiba Corp. have extended technology development agreements with IBM Corp. to participate in the development of a 28nm, high-k metal gate (HKMG), low-power chip technology.

Electronics and Toshiba join the IBM technology alliance to develop a 28nm bulk CMOS process technology. The alliance, based at IBM's facility in East Fishkill, New York, now includes Chartered Semiconductor Manufacturing Ltd, Globalfoundries, Infineon Technologies, NEC, Samsung Electronics Co. Ltd, STMicroelectronics and Toshiba.

The low-power, 28nm technology can contribute to faster processing speed and longer battery life in next-generation mobile communication devices and other consumer electronics applications.

The 28nm alliance builds on the success of earlier joint development work in 32nm HKMG technology. Clients can transition to 28nm technology without the need for a major redesign, with lower risk, reduced cost and faster time-to-market. Internal test results have shown the power-efficient advantages of HKMG and device performance that meets or exceeds competitive targets.

"Together, the alliance partners will deliver a high-performance, energy efficient technology to enable a full range of multifunction, power-sensitive mobile and consumer electronics," said Gary Patton, VP for IBM's Semiconductor Research and Development Center.

Toshiba joined the IBM bulk semiconductor process technology development alliance in December 2007 and NEC joined in September 2008.

"The advanced 28nm low-power process technology will dramatically enhance the product's density, performance, as well as power consumption compared to the former 40nm node, providing highly competitive solutions, especially in the fields of consumer electronics and automotive." said Masao Fukuma, senior VP of NEC.





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