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'First' sub-1m次 25V MOSFET unveiled

Posted: 10 Jul 2009 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFET? RDSon? package?

NXP Semiconductors has unveiled what it claims is the world's first n-channel sub 1m次 25V MOSFET, PSMN1R2-25YL. According to the company press release, the new MOSFET features the lowest ever RDSon in a Power-SO8 package (Loss Free package: LFPAK).

The PSMN1R2-25YL is an extension to NXP's existing MOSFET portfolio. It combines Power-S08 LFPAK package with Trench 6 generation silicon and targets demanding applications such as power OR-ring, motor control and high efficiency synchronous buck-regulators.

"The technology for producing MOSFETs is an ongoing race to improve performance," said John David Hughes, senior international product marketing manager of NXP.

NXP's Trench 6 MOSFETs, PSMN1R2-25YL, has a typical RDSon of 0.9m次 for a 25V part in Power-S08 (LFPAK) and 1.0m次 (typical) for a 30V part.

NXP is also announcing a new portfolio of products aimed at power supply, motion control and industrial markets. The range includes products with operating voltages of 25-, 30-, 40- and 80V, packaged in Power-S08 (LFPAK) and TO220. PSMN1R2-25YL is now available at $0.80 (for 1,000 pieces).

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