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Globalfoundries details process roadmap

Posted: 20 Jul 2009 ?? ?Print Version ?Bookmark and Share

Keywords:foundry? Globalfoundries roadmap? fab?

Taking on foundry giants, startup Globalfoundries Inc. has outlined its process roadmap and disclosed plans to break ground on its new U.S. fab.

The company is set to will break ground on the fab July 24. As previously reported, it plans a $4.5 billion, 300mm fab in Malta in New York's Saratoga County that is expected to come online in 2012 with 35,000 wafer starts per month at full capacity.

Globalfoundries is the silicon foundry venture created by the spinoff of Advanced Micro Devices Inc.'s manufacturing operations and backed by an investment from Advanced Technology Investment Co. of Abu Dhabi.

In the meantime, the company is ramping up its existing fabs in Dresden, Germany, which were once part of AMD. As expected, the company is going after the leading-edge foundry business, thereby competing against UMC, TSMC, and, to some degree, its fab partners in Chartered and Samsung. Globalfoundries is part of IBM Corp.'s "fab club," which includes Chartered Semiconductor, IBM, Samsung and others.

"We feel we have an opportunity" despite the downturn, said Tom Sonderman, VP of manufacturing systems and technology at Globalfoundries. "Customers are looking for choices at the leading-edge."

At present, the company has one fab, dubbed Module 1. It is processing 45nm wafers, based on silicon-on-insulator (SOI) technology and immersion lithography. Its only customer is AMD.

For critical layers, Globalfoundries' main lithography vendor is ASML Holding NV. "We are also engaged with Nikon and Canon," Sonderman said. For low-k at 45nm, the company is using Applied Materials Inc.'s Black Diamond films.

In an interview at Semicon West, Sonderman outlined GlobalFoundries' roadmap:

??Q1 2010: The company plans to ramp a 32nm process based on SOI and a high-k/metal-gate scheme.

??Q2 2010: It plans to ramp a 45-/40nm low-power process. The bulk technology will not include SOI or high-k.

??Q4 2010: It plans to offer a 28nm generic bulk process, based on high-k. It will not include SOI.

??Q1 2011: It hopes to offer a 28nm low-power bulk process, also based on high-k. The 28nm processes will ramp in the Dresden fab. The so-called Module 2 plant is capable of making 25,000 wafers per month.

- Mark LaPedus
EE Times

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