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Samsung ramps up 40nm 2Gbit DDR3 production

Posted: 27 Jul 2009 ?? ?Print Version ?Bookmark and Share

Keywords:Samsung DDR3? DRAM? 40nm process?

Samsung Electronics Co. Ltd has begun mass production of 2Gbit DDR3 devices using 40nm class process technology.

Samsung said its 40nm production process will provide a roughly 60 percent increase in production productivity over use of a 50nm process.

DDR3 is the third generation of double-data rate (DDR) synchronous memory. Samsung and others have predicted that DDR3 will become the mainstream DRAM technology by the end of this year. Some analysts have suggested that DDR3 will not capture meaningful market share this year.

Citing data from market research firm iSuppli Corp., Samsung said that 2Gbit DDR3 is expected to account for 82 percent of the total DDR3 DRAM market in units sold by 2012, and become the mainstream DDR3 DRAM product by 2010.

In a statement, Jim Elliot, vice president of memory marketing at Samsung's U.S. subsidiary, Samsung Semiconductor Inc., said the company is seeing market adoption of DDR3 picking up steam.

In addition to 16-, 8- and 4Gbyte registered in-line memory modules for servers, Samsung will produce unregistered in-line memory modules for workstations or desktop PCs or small outline dual in-line memory modules for notebook PCs of up to 4Gbytes, using the new chip, the company said. The monolithic 2Gbit chips each support a data rate of up to 1.6Gbit/sat 1.35V, up to twice as fast as an 800Mbit/s 1Gbit-based dual-die package.

In April, Samsung said it would ramp up production of DDR3 memory chips in response to increased demand stemming from Intel Corp.'s launch of the Xeon processor 5500 series.

- Dylan McGrath
EE Times

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