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ST taps GlobalFoundries for 40nm low-power devices

Posted: 31 Jul 2009 ?? ?Print Version ?Bookmark and Share

Keywords:GlobalFoundries ST deal? 40nm process? foundry?

STMicroelectronics and GlobalFoundries have partnered to develop products based on 40nm low-power (LP) bulk silicon technology. First tape out is planned to start in 2010. The 40nm LP process is suitable for the next generation of wireless applications, handheld devices, and consumer electronics, which require excellent performance and long battery life.

"When we launched GlobalFoundries, our long-term vision was to bring a new business model to the foundry market and to become the partner of choice for the largest and most innovative semiconductor design and manufacturing companies," said Doug Grose, CEO of GlobalFoundries. He added that with its partnership with ST, the foundry startup can begin to deliver that vision. "We look forward to harnessing our full capabilities for ST to provide best-in-class service in bringing their 40nm design innovation to life in high volumes and at mature yields," he said.

"To ensure ample capacity for our customer/partners at the leading-edge of low-power design, ST needs an agile and high-performance manufacturing partner that can adapt to our changing needs," stated Jean-Marc Chery, executive VP and chief technology officer of ST. "With a strong commitment to manufacturing and technology excellence at the leading-edge, we believe GlobalFoundries is an excellent partner to collaborate on low-power design innovation in 2010 and beyond."

GlobalFoundries production is centered at Fab 1, its 300mm manufacturing campus in Dresden, Germany. The foundry also recently broke ground on Fab 2, a $4.2B wafer manufacturing facility in Malta, N.Y. Fab 2 is expected to be the most advanced semiconductor foundry in the world.

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