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MOSFET delivers 4kV ESD protection

Posted: 07 Aug 2009 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFET? ESD? DC/DC?

Fairchild Semiconductor has unveiled a single p-channel MOSFET that enables higher levels of efficiency and a small form factor.

The FDZ197PZ offers an RDS(ON) value of 64m? at VGS = -4.5V, 15 percent less than alternate solutions. This feature increases efficiency and offers a 1mm x 1.5mm footprint, reducing board space requirements. Its WL-CSP package provides excellent power dissipation and conduction losses characteristics compared to conventional plastic-packaged MOSFETs in a similar footprint. Unlike other MOSFETs in its class, the FDZ197PZ offers robust ESD capability (4kV), protecting the device from stresses caused by ESD events that could potentially disable the application.

This p-channel MOSFET is fabricated with Fairchild's advanced-performance PowerTrench MOSFET process technology, making it possible to achieve lower RDS(ON) and higher load currents in smaller package sizes. The WL-CSP package features 6?m x 300?m Pb-free solder balls for the board connection, providing excellent electrical and thermal resistance values compared to other WL-CSP pin outs. It features a low package height of only 0.65mm when mounted, facilitating slimmer designs.

The FDZ197PZ is part of a comprehensive portfolio of advanced MOSFETs and answers the industry's need for compact, low-profile, high performance MOSFETs for charging, load switching, DC/DC and boost applications.

The FDZ197PZ is available now for $0.35 each in 1,000 pieces. Delivery is eight to twelve weeks ARO.

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