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600V MOSFETs trims switching, conduction losses

Posted: 09 Sep 2009 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFET? power supply? converter?

600V Super-Junction MOSFET

Fairchild Semiconductor touts that the low RDS(ON) and total gate charge of its new generation 600V Super-Junction MOSFETs bring 40 percent lower Figure of Merit compared to the 600V SuperFET MOSFETs.

The 165m?-maximum FCP22N60N, FCPF22N60NT and FCA22N60N, and the 199?-maximum FCP16N60N and FCPF16N60NT offer reverse recovery characteristics di/dt and dv/dt bringing higher reliability for resonant converter, LLC and phase-shifted full-bridge topologies found in switch mode power supply designs.

Compared to SuperFET MOSFETs, these 600V Super-Junction MOSFETs offer a low gate charge for the same RDS(ON), offering excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency. They provide low input and output capacitances, improving efficiency at light load conditions. These features enable power supplies to meet Energy Star 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.

These products are part of Fairchild�s comprehensive MOSFET portfolio that offer designers a wide range of breakdown voltages (-500V to 1000V) to deliver efficient power management anywhere electronic power conversion is needed.

Pricing for the FCP22N60N and FCPF22N60NT is $1.60; the FCP16N60NT and FCPF16N60NT is $1.50 and FCA22N60N is $1.80, each in 1,000 pieces. Samples are available now. Delivery is nine to eleven weeks ARO.

- Henri Arnold
EE Times Europe

For application notes on MOSFETs click here.





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