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ST chooses Applied Materials' HKMG for 28nm

Posted: 11 Dec 2009 ?? ?Print Version ?Bookmark and Share

Keywords:high-k/metal gate? HKMG? 28nm production?

STMicroelectronics has chosen Applied Materials Inc.'s high-k metal gate (HKMG) technology for the production of its 28nm logic devices. The technology will be used to fabricate the transistor gate layers in ST's SoC devices at its facility in Crolles, France.

HKMG is an emerging technology that allows the continuation of Moore's Law, enabling faster switching speed while reducing device power consumption. Replacing traditional silicon dioxide as the main gate dielectric, the new HKMG structure integrates a hafnium-based high-k material with a new metal gate electrode to increase capacitance and control leakage current.

"We are impressed and extremely pleased with the speed at which Applied has developed integrated HKMG solutions that address our 28nm device requirements," said Jo�l Hartmann, silicon technology development director for ST. "We are confident that through our continued collaboration with Applied Materials we can quickly bring our 28nm HKMG solution into volume production."

Major challenges to implementing HKMG technology for the industry have been the development of manufacturable processes using new materials that can provide optimum transistor characteristics while maintaining the integrity of the dielectric stack. Applied has developed a multi-step process combining its leading-edge technologies to provide ST with a robust and reliable HKMG solution.

"This important collaboration with ST demonstrates that our HKMG solution can be successfully integrated in their logic devices with superior performance," said Steve Ghanayem, corporate VP and general manager of Applied's front end and metal deposition products business unit. "ST's selection of our HKMG processes is a strong testament to the work we've done to provide production-worthy solutions for this challenging new transistor technology."





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