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RF CMOS switches handle 3G/4G smart phones

Posted: 18 Feb 2010 ?? ?Print Version ?Bookmark and Share

Keywords:switch? CMOS? smart phone? 3G?

RF Micro Devices has successfully qualified and released its first high-power RF CMOS switch using high-resistivity silicon substrates. RFMD is leveraging this new process technology, as well as patent-pending design and circuit-related technology developed by RFMD, to introduce a product portfolio of high-performance silicon switch-based products for next-generation 3G and 4G smart phones, as well as other cellular handset, wireless infrastructure, WLAN, CATV/broadband and aerospace and defense applications.

Eric Creviston, president of RFMD's cellular products group (CPG), said, "RFMD's CMOS-based cellular switches deliver meaningful performance, size and cost benefits, including excellent linearity and isolation capabilities, which are critical to today's multiband 3G handsets. We are forecasting significant customer adoption in calendar 2010 driven by leading 3G smart phone manufacturers."

Bob Bruggeworth, president and CEO of RFMD, added, "For RFMD, these new CMOS-based productsand our entire Switch and Signal Conditioning product portfoliohighlight the increasing dollar content opportunities available to RFMD and the continued success of our diversification efforts. Equally important, our CMOS-based switch portfolio enables further improvement in our return on invested capital as we migrate technologies and IP developed by CPG into the markets served by RFMD's multi-market products group."

RFMD's CMOS-based cellular switches meet or exceed the stringent linearity and isolation requirements of next-generation 3G and 4G smart phones while providing superior ESD performance (HBM data rated at 2000V). Also, by integrating the controller and RF switch on the same circuit, RFMD's patent-pending circuit-related technology and the innovative high-resistivity CMOS technology reduce product size while improving product performance. Accordingly, RFMD's silicon switches deliver a lower cost and higher performance 3G solution than is obtainable from competing silicon process technologies, including silicon-on-sapphire.

RFMD's first high power CMOS-based cellular switches include the RF1603, a single-pole, three-throw switch, and the RF1604, a single-pole four throw switch. RFMD has sampled both products to tier one customers, and commercial production is expected to commence in the first half of calendar 2010. Subsequent CMOS-based products will address increasing levels of end-product complexity and will include RFMD's growing portfolio of switch filter modules and switch duplexer modules for 3G smart phones.





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