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Nikon updates litho roadmap

Posted: 01 Mar 2010 ?? ?Print Version ?Bookmark and Share

Keywords:Nikon roadmap? EUV? lithography? extreme ultraviolet?

Japan's Nikon Corp. has outlined its lithography roadmap at the LithoVision 2010. As part of the plan, Nikon has devised a new lens for its latest 193nm immersion scanner and revised its roadmap for extreme ultraviolet (EUV) lithography.

Officials from Nikon also confirmed that EUV is delayed for the 22nm "half-pitch" node. EUV will be ready for the 16nm node, the company said.

Nikon is shipping a slightly new version of its 193nm immersion tool, which is geared for 32nm chip production and below. Dubbed the NSR-S620D, the tool features a lens with a numerical aperture (NA) of 1.35. The first version of the S620, which was shipped last year, had an NA of 1.30.

As reported, it will also make use of a new platform, dubbed the Streamlign. Overlay is 2nm and throughput is 200 wafers an hour. That machine is targeted for Intel Corp. and other customers, sources said.

In 2007, Nikon disclosed the so-called EUV1 tool, which is basically an R&D machine. The tool, which is in use for R&D, has an NA of 0.25 and a field size of 26mm x 33mm. Selete and Nikon have the EUV1 tool installed in their respective locations.

Nikon is also working on an EUV tool with a six-mirror, 0.35 NA lens. That tool is due out in 2012. In parallel, Nikon is working on a tool with an NA of 0.4, which can extend to 16- and 11nm chip production. That tool is due out in 2014 or 2015.

- Mark LaPedus
EE Times





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