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MOSFET avoids internal diode recovery failures

Posted: 12 Apr 2010 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFET? diode? switching?


From Vishay Intertechnology Inc. comes a 500V n-channel power MOSFET with improved switching speed and losses compared to previous-generation devices.

Suitable for ZVS topologies, the SiHF8N50L-E3 offers a low trr of 63ns and Qrr of 114nC, with an improved gate charge of 34nC.

The SiHF8N50L-E3's improved reverse recovery characteristics result in better EMI immunity and better efficiency, while avoiding internal body diode recovery failures that cause MOSFET burn-out.

The new MOSFET combines its 500V rating with a low 1? maximum on-resistance at a 10V gate drive. This low RDS(on) translates into lower conduction losses that save energy in LLC, full-bridge, half-bridge, and double-forward topologies for LIPS inverters, HIDs, PC power supplies, and ballasts.

For reliable operation, the device is 100 percent avalanche-tested. Peak current handling is 22A pulsed and 8A continuous (limited by maximum junction temperature). Offered in the TO-220 FULLPAK package, the SiHF8N50L-E3 is compliant to RoHS Directive 2002/95/EC.

Samples and production quantities of the new power MOSFET are available now, with lead times of eight to ten weeks for larger orders.

- Paul Buckley
EE Times Europe

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