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Schottky diodes eliminate switching losses

Posted: 05 May 2010 ?? ?Print Version ?Bookmark and Share

Keywords:Schottky diode? switching loss? data center?

Cree Inc. has launched the Z-Rec 1700V junction barrier Schottky (JBS) diode products targeted at high-voltage power-conversion applications in motor-drive, wind-energy and traction systems.

Leveraging silicon carbide's unique advantages over silicon to virtually eliminate diode switching losses , the Initial products in the series include 10A and 25A JBS diodes in die form, ready for integration into 1700V power modules ranging from 50A to 600A. The new 1700-V JBS series can increase the efficiency, reliability and longevity of power systems while also reducing the overall system size, weight and cost.

"The 1700-V diodes extend our leadership in energy-efficient power systems for data center and solar power markets to new markets such as wind-energy, train, tram and electric vehicle power converters," said Cengiz Balkas, Cree, VP and general manager, power and RF. "Cree has the diodes of choice when high-efficiency power systems are a must. The advantages of silicon carbide are clear, and for high-voltage, high-frequency systems, you can't afford not to use SiC."

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