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GaAs FET power amps rated for 18W, 30W

Posted: 11 Jun 2010 ?? ?Print Version ?Bookmark and Share

Keywords:GaAs FET? power amplifier? microwave?

TIM1213-18L, TIM1213-30L GaAs FET power amps

Toshiba America Electronic Components Inc. (TAEC) has expanded its Ku-Band GaAs FET lineup with two higher output power devices rated for 18- and 30W.

The new GaAs FETs, TIM1213-18L and TIM1213-30L, operate in the 12.7GHz to 13.2GHz range, and are targeted for use in microwave radios for microwave links and satellite communications. Other current Toshiba GaAs FETs in this frequency range feature 2W, 4W, 8W, 10W and 15W power output ratings.

The TIM1213-18L has output power at 1dB gain compression point (P1dB) of 42.5dBm (typ.), power gain at 1dB gain compression point (G1dB) of 6.0dB (typ.) and power efficiency of 28 percent. The TIM1213-30L features P1dB of 45.0dBm (typ.), G1dB of 5.5dB (typ.) and power added efficiency of 23 percent.

"Continuing our long tradition of developing higher power amplifiers as technology advances, Toshiba is expanding our Ku-Band product family with these new devices to enable our customers to design more powerful and linear microwave radios with fewer components," said Homayoun Ghani, business development manager, microwave, logic, and small signal devices, in TAEC's discrete business unit.

Samples of the new Ku-Band GaAs FETs, TIM1213-18L and TIM1213-30L, are available now. For pricing, please contact your Toshiba representative.

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