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20V bipolar transistors deliver increased power density

Posted: 22 Jun 2010 ?? ?Print Version ?Bookmark and Share

Keywords:power management? transistor? MOSFET? IGBT?

ZXTN26020DMF transistor

Diodes Inc. has released 20V NPN and PNP bipolar transistors packed in DFN1411-3 surface mount that deliver increased power density and efficiency of power management circuits.

The transistors have been designed on Diodes' Generation 5 matrix emitter bipolar process. With a footprint measuring just 1.1mm x 1.4mm and an off-board height of 0.5mm, the complementary ZXTN26020DMF and ZXTP26020DMF devices enable portable product miniaturization while offering improvements in both electrical and thermal performance.

Suiting MOSFET and IGBT gate driving, DC/DC conversion and general switching duties, the miniature transistors are a space-saving alternative to much larger SOT23 packaged parts and provide excellent thermal performance, having a minimum FR-4 PCB power dissipation rating of 0.38W for its footprint.

High gain, low saturation and fast switching devices, the bipolars are also characterized by a high continuous current handling capability. The maximum collector current ratings of 1.5A for the NPN and -1.25A for the PNP are not available from any smaller package device.

The ZXTN26020DMF and ZXTP26020DMF transistors are priced at $0.14 in 10,000-piece quantities.

- Paul Buckley

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