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NXP sets up RF creation center in Massachusetts

Posted: 28 Jun 2010 ?? ?Print Version ?Bookmark and Share

Keywords:NXP RF center? microwave IC? power amplifier?

NXP Semiconductors has opened a high-performance RF product creation center (PCC) in Billerica, Massachusetts, United States that will focus on the design of RF and microwave ICs.

Leveraging NXP's IP, product portfolio, processes and manufacturing capabilities, the design center will further enhance the position of NXP in these growing RF & Microwave markets. With its location in close proximity to design teams in France and the Netherlands, the center will also strengthen the technical and application support provided to the company's Americas-based customers.

Uniquely positioned in the RF and microwave market with a rich portfolio of high-performance processes in-house, NXP's broad RF portfolio spans high-power LDMOS for power amplifiers to the latest SiGe:C BiCMOS for RF/IF MMICs. Additionally, advanced CMOS process for high-speed converters completes the RF front-end. As all these technologies are designed and manufactured in-house, they are custom-tuned to application-specific requirements.

"This new product creation center builds upon NXP's 50-year heritage in RF innovation, further refining, localizing and extending that competence to meet customer demands and create innovative applications," said John Croteau, senior VP and general manager of the High Performance RF and Lighting business lines at NXP. "Process, packaging and circuit design innovation remain pillars of our strategy, yielding leadership positions in technologies such as SiGe:C, LDMOS and JESD204A."

"The deep pool of experienced and talented RF designers, the active RF customer base and the closeness to Europe make Boston the ideal location for the new NXP PCC,' said Ian Gresham, general manager Boston PCC, NXP. "The PCC team will endeavor to push the limits of our high performance RF & Microwave products overcoming market challenges through innovation."

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