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RF transistors deliver up to 2kV HBM ESD protection

Posted: 12 Jul 2010 ?? ?Print Version ?Bookmark and Share

Keywords:RF transistor? ESD protection? wireless application? LNA?

Infineon RF transistor

The new RF transistors form Infineon Technologies comes with ESD protection for reliable, high- sensitivity wireless communications device designs. Offering an effective ESD protection, the new low-noise bipolar transistors are offered in the same packages as previous generation devices to ensure an easy upgrade path, and in a very slim package variant to reduce board space.

When used as the LNA stage of the RF signal chain, the new transistors reduce the risk of ESD that can lead to failure or damage of the wireless system. The new energy efficient and cost-effective RF transistors are suitable for various wireless communication applications like mobile phones, WLAN routers, WiMAX and GPS modules, STBs, active antenna or Wi-Fi data cards.

The devices feature a high maximum RF input power with a very low noise figure (NF), high gain and high intermodulation robustness that allow system sensitivity to be increased significantly. The new transistors provide effective ESD protection of up to 2kV HBM which is 10x better than previous devices. The maximum input power was increased from 10dBm to 20dBm while the NF is specified at 0.6dB at 2.4GHz.

"With the introduction of the new ESD-protected RF transistors we offer our mobile communication customers the best protection currently available on the market," said Michael Mauer, senior marketing director of RF and protection devices at Infineon. "Leveraging from the broad product portfolio of Infineon, our customers easily find the optimized solution for their application with the right mixture of noise figure, linearity and gain."

The ESD protected transistors come in BFP640ESD, BFP720ESD and BFP740ESD in SOT343 and TSFP-4 packages. The transistors are available in high-volume quantities. Single unit prices range from $0.40 to $0.50 for sampling units.





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