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IMEC's GaN-on-Si team gains new members

Posted: 20 Jul 2010 ?? ?Print Version ?Bookmark and Share

Keywords:gallium nitride-on-silicon? wafers? optoelectronics?

IMEC announced that Micron Technology, Applied Materials, and Ultratech have joined its industrial affiliation program (IIAP) program on gallium nitride-on-silicon (GaN-on-Si) research. A multi-partner R&D program, the GaN-on-Si IIAP is developing process and equipment technologies for manufacturing solid state lighting (e.g. LEDs) and next-generation power electronics components on 8-inch (convert to mm except for displays) Si wafers.

Gallium nitride offers higher breakdownVage and current capacity than silicon which is used in most components today, making it a promising material for optoelectronics and advanced power electronic components. However, to make GaN-based devices a competitive alternative to silicon devices, GaN manufacturing technology needs to achieve the same economies of scale. Today, state-of-the-art LED manufacturing processes are typically performed on expensive 4-inch (convert to mm except for displays) sapphire substrates. By depositing the GaN material on 8-inch (convert to mm except for displays) silicon substrates, the productivity of GaN-based device manufacturing can be significantly increased. IMEC's GaN-on-Si program is also using an Applied Materials mainframe to develop 8-inch (convert to mm except for displays) GaN-on-Si technology that is compatible with the CMOS fab infrastructure. This can further enhance productivity and result in lowering device cost.

The program also aims to cut the cost and improve the performance of GaN devices. It brings together leading IDMs, foundries, compound semiconductor companies, equipment suppliers and substrate suppliers to develop 8-inch (convert to mm except for displays) GaN technology.

Micron Technology, Applied Materials, and Ultratech will actively participate in the IIAP at IMEC in Leuven, Belgium. This on-site participation enables the partner companies to have early access to next-generation LED and power electronics processes, equipment and technologies.

Rudi Cartuyvels, VP and general manager, process technology at IMEC said, "We are excited to welcome three major companies to our GaN-on-Si IIAP. Less than a year after the program's launch in July 2009, we have assembled a strong consortium, including IDMs and equipment suppliers, and we expect more companies to join in the near future. This collaboration reflects the value of IMEC's research on GaN-on-Si as a reliable cost-effective solution for next-generation LED and power electronics devices. "





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