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2Gb 50nm DDR2 supports Oak Trail

Posted: 30 Jul 2010 ?? ?Print Version ?Bookmark and Share

Keywords:2Gb 50nm DDR2 memory? Oak Trail platform? DRAM? DIMMS?

 2Gb DDR2 space savings

Micron Technology, Inc. has just announced a new 2Gb 50nm DDR2 memory device to support the upcoming Intel Atom platform for tablet and netbook personal computers, codenamed "Oak Trail." The small form factor, high-density and low-power consumption of the 2Gb 50nm DDR2 makes it an ideal memory solution for the tablet PC market, wherein size and battery life are the key features.

This transition of Micron's 2Gb DDR2 product to the more advanced 50nm process node shows the company's successive commitment and current investment in technologies that meet market demand. Furthermore, the increase in density from 1Gb to 2Gb-based components and promotion to the 50nm process inherently provide improved power savings and a smaller memory footprint.

Micron's vice president for DRAM Marketing, Robert Feurle says, "Micron's 2Gb 50nm DDR2 device is the ideal memory companion for Intel's upcoming Intel Atom processor-based 'Oak Trail' platform."

Meanwhile, mobile product group director at Intel, Erik Reid says, "The upcoming Intel Atom 'Oak Trail' platform is optimized specifically for tablets and sleek netbook designs." He add, "With its low power and performance for multi-tasking, rich media and the Internet, the features and benefits of 'Oak Trail,' in combination with Micron's 2Gb 50nm DDR2 provide a powerful solution for our joint customers' design needs."

Micron has maintained a high-level of quality in delivering DDR2 memory for customers, offering premium performance and multiple configurations, densities, and package options. In line with these, the new memory product line features: (1) Multiple density options available in 512 megabit (Mb) to 2Gb components in X4/X8/X16 packages; (2) High-capacity module configurations ranging from 1GB to 4GB UDIMMS and SODIMMS; (3) Up to 800 megatransfers per second (MT/s) providing a migration path for higher bus speeds; (4) Support for 1.55V, for reducing memory system power demands

Availability of Product C Micron is expected to begin sampling its 2Gb 50nm DDR2 device in September 2010 with production planned for Q4 2010.

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