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MOSFET touts trench tech for auto apps

Posted: 04 Aug 2010 ?? ?Print Version ?Bookmark and Share

Keywords:power? MOSFET? automotive?


Infineon Technologies AG introduces a power MOSFET targeting high-current automotive applications. The OptiMOS-T2 30V MOSFET is an N-channel device with drain current of 180A and RDS(on) of just 0.9m? at 10V gate-to-source voltage. The IPB180N03S4L-H0, which comes in a D2PAK-7 package, addresses customer needs for power MOSFETs in standard packages offering both high nominal currents and lowest Rds(on).

Based on the second generation of Infineon's trench technology for power MOSFETs, the OptiMOS-T2 device is suited for high-current automotive motor drive applications, electric power steering and start/stop functionality.

For cost and efficiency reasons there is an industry trend towards trench concepts. Power MOSFET trench technologies, such as OptiMOS-T2, exhibit improvement in both RDS(on) and gate charge compared to previous technology. This results in a Figure of Merit (FoM), which is the product of gate charge and RDS(on), that is among the industry's lowest. Also, Infineon's Powerbond technology addresses the wirebond limitations in a MOSFET, reducing the RDS(on) drop of the wirebond and increasing the current capability. This also enhances reliability by keeping the wirebonds cooler. The latest Powerbond technology enables up to four double-stitch 500?m wirebonds in a single MOSFET which permits 180A current rating in a standard package.

OptiMOS-T2 technologies and the robust packages are designed to sustain 260C during reflow soldering at Moisture Level 1 and have Pb-free plating for RoHS compliance. The IPB180N03S4L-H0 power MOSFET is qualified according to the AEC-Q101 specification.

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