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Intel, Micron codevelop 3bpc NAND flash

Posted: 20 Aug 2010 ?? ?Print Version ?Bookmark and Share

Keywords:NAND? flash? memory? 25nm?

Intel Corp. and Micron Technology Inc. have produced a 3bit-per-cell (bpc) NAND flash memory using 25nm process technology. Initial product samples have been sent to select customers, and the product is expected to be in full production by the end of the year.

The 64Gb 3bpc on 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB , SD flash card and CE markets. Flash memory is mainly used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices such as DSCs, portable media players, digital camcorders and all types of PCs. These markets are under pressure to offer higher capacities at lower prices.

Designed by the IM Flash Technologies (IMFT) NAND flash joint venture, the 64Gbor 8GB25nm lithography stores three bits of information per cell, rather than the traditional one bit (single-level cell) or two bits multi-level cell (MLC). The industry also refers to 3bpc as triple-level cell (TLC).

The device is more than 20 percent smaller than the same capacity of Intel and Micron's 25nm MLC, which is currently the smallest single 8GB device in production today. Small form-factor flash memory is especially important for consumer end-product flash cards given their intrinsic compact design. The die measures 131mm2 and comes in an industry-standard TSOP package.

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