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$200,000 grant for LED partnership

Posted: 31 Aug 2010 ?? ?Print Version ?Bookmark and Share

Keywords:silicon carbide? LED?

The US National Science Foundation is hoping that a $200,000 grant will lead to more efficient LEDs. The grant was awarded to SiC Systems, which is able to produce 6-inch silicon carbide (SiC) substrates in different crystallographic orientations. Under the terms of the grant, SiC Systems will have to partner with the Smart Lighting Engineering Research Center (ERC), which produces advanced LEDs that outperform today's sapphire substrates.

Most of today's solid state lighting applications rely on high-power blue GaN LEDs. However, efficient gallium nitride (GaN) LEDs at other wavelengths are needed to achieve high-performance lighting systems with high color fidelity. It is hoped that combining SiC Systems' advanced silicon carbide structures with innovative LED growth and fabrication technology under development at the Rensselaer Polytechnic Institute will create more efficient GaN LEDs at a broader range of operating wavelengths.

The partnership is expected to create 25 new jobs at SiC Systems.

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