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NAND Flash rolls on 24nm CMOS process

Posted: 03 Sep 2010 ?? ?Print Version ?Bookmark and Share

Keywords:NAND flash? memories? 24nm? CMOS?

Toshiba Corp. has started mass production of NAND flash memories using a 24nm CMOS manufacturing process technology. The chip represents the smallest geometry and the highest density in NAND flash, according to the company.

The technology was used to make 2-bit per cell 64Gb memory. The company also plans to offer a 32-Gb NAND flash memory and 3-bit per cell memory based on the process technology.

The 24nm process products alco come with Toggle DDR to enhance data transfer speed, Toshiba said.

By accelerating process migration in NAND flash memory, Toshiba hopes to strengthen and extend its leadership in the NAND flash memory market. The moves is expected to increase the difficulty of introducing alternative memory technologies, such MRAM and phase-change memory.

Samsung Electronics Co. Ltd has announced its production of 20nm NAND chips for use in secure digital memory cards and embedded memory, but analysts have referred to that as a 27nm device. Hynix Semiconductor Inc. has said that it has begun mass production of a 64Gb NAND flash chip at its 300mm fab, dubbed M11. That is believed to be a 26nm device.

At the beginning of 2010 Intel and Micron took process technology lead in NAND flash by rolling out the first 25nm NAND device as a multi-level-cell 64Gb device.

- Peter Clarke
EE Times

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