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LDMOS UHF transistor capable of 120W DVB-T output

Posted: 28 Sep 2010 ?? ?Print Version ?Bookmark and Share

Keywords:LDMOS? broadcast? power transistor? DVB-T?

Designers can now make use of an ultra-high frequency (UHF) RF power transistor for broadcast transmitters and industrial applications such as DVB-T. The BLF888A from NXP Semiconductors N.V. is a 600W laterally diffused metal oxide semiconductor (LDMOS) device that can use 120W average power with efficiencies greater than 31 percent for a DVB-T signal over the full UHF band from 470MHz to 860MHz.

NXP used its 50V high-voltage LDMOS process technology, along with advanced thermal concepts, and came up with the BLF888A, which features high power density and thermal resistance as low as 0.15K/W. The company said the BLF888A allows broadcast equipment manufacturers to optimize existing or new transmitter installations in terms of performance and cost.

 NXP's BLF888A LDMOS broadcast transistor

NXP said the BLF888A, which is on display at the European Microwave Week in Paris, boasts of excellent linearity, high gain of 21dB and outstanding ruggedness corresponding to VSWR greater than 40:1.

The BLF888A is in a bolt-down package but the more compact BLF888AS may be soldered.





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