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30nm-process 2-Gb DDR3 SDRAM yields 45% more chips per wafer

Posted: 12 Oct 2010 ?? ?Print Version ?Bookmark and Share

Keywords:DRAM? 30nm process? DDR3 SDRAM?

Elpida Memory Inc. announced completion of a 30nm process 2-gigabit DDR3 SDRAM.

Elpida reports that the new process yields 45 percent more chips per wafer compared with its 40nm process products. Additionally, this new process design will assist in controlling the rising chip costs often associated with process migration. As an outcome, the 2-gigabit DDR3 is viewed to become an extremely cost-competitive product in the market.

Elpida's new chip successfully fulfills the JEDEC specifications for the high-speed DDR3-1866 and 1.35V low-voltage, high-speed DDR3L-1600 memory chips, both projected to become mainstream industry products in 2011. Moreover, the 30nm DDR3 SDRAM is eco-friendly, achieving remarkably low levels of electric current usage (approximately 15 percent less during operation and approximately 10 percent less on standby usage compared with Elpida's 40nm products), thereby contributing to lower PC and digital consumer electronics power consumption.

Elpida says it will deliver sample shipments of the newly developed DDR3 SDRAM in December 2010. Volume production is expected to start in the same month. The company will also apply the new 30nm process technology to its Mobile RAM products, as well as to use the process together with Through Silicon Via (TSV) technology to accommodate one-chip memory solutions for mobile phones, digital still cameras, PC DRAMs and other consumer electronics.

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