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All-silicon CMOS oscillator highlights shock resistance

Posted: 26 Oct 2010 ?? ?Print Version ?Bookmark and Share

Keywords:CMOS? oscillator technology?

IDT announced that its new all-silicon CMOS oscillator, IDT3C02, has achieved a 100ppm total frequency error across temperature, voltage and other factors. Utilizing the patented IDT CMOS oscillator technology, the IDT3C02 oscillator takes the place of quartz crystal-based oscillators with a monolithic CMOS IC.

Since the device contains no moving elements and generates the frequencies electronically instead of using mechanical or piezo-electronic resonance, the all-silicon, monolithic implementation leads to excellent shock and vibration resistance.

The device is presented in a very thin form factor (5x3.2mm) without the use of any mechanical frequency source or PLL. As a �low-power, low-jitter replacement to general-purpose quartz crystal oscillators? it targets server and enterprise designs as well as datacom devices with Ethernet ports.

The product is particularly designed to work with next-generation storage, datacom and connectivity interfaces, such as 1Gb Ethernet, SAS, SuperSpeed USB (USB 3.0) and PCI Express.

Built on a standard, readily available CMOS process, the device utilizes a programmable architecture and accommodates various configuration options to address a broad range of applications.

The IDT3C02 oscillator is designed with a unique analog core, consuming less than 2.5mA (unloaded, typical). It delivers remarkable -140dBc/Hz phase noise at 1MHz offset from carrier. It also has a 200nA (typical) low power stand-by mode, and fast start-up time of 100us (typical).

The IDT3C02 is priced at $0.73 each in 1,000-unit quantities.

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