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RF power transistors tout ruggedness, affordability

Posted: 18 Nov 2010 ?? ?Print Version ?Bookmark and Share

Keywords:power transistor? RF? modulated communications?

Freescale Semiconductor has brought to market three advanced industrial RF power transistors designed for ruggedness, high RF performance, and affordability.

Freescale said the MRFE6VP5600H/S and MRFE6VP61K25H/S 50V LDMOS power transistors and the MRF8P29300H/S 30V LDMOS power transistor are ideal for cost-effective industrial and commercial aerospace designs.

The MRFE6VP5600H/S and MRFE6VP61K25H/S 50V LDMOS transistors are designed for output power levels of 600W and 1250W for rugged applications. They can handle a Voltage Standing Wave Ratio of 65:1 at multiple phase angles. Designers will be able to shed external circuitry, thereby reducing the system cost while improving performance.

The MRF8P29300H/S, meanwhile, is designed for air traffic control and modulated communications applications at frequencies ranging from 10MHz to 3500 MHz and power levels from 10W to 1000W peak RF power. It offers a 2700MHz to 2900MHz frequency range with pulsed RF output power of 320W. Power gain is at 13.3dB while drain efficiency is 50.5 percent.

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