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NXP launches High Performance RF design challenge

Posted: 12 Jan 2011 ?? ?Print Version ?Bookmark and Share

Keywords:High Performance RF? Design Challenge? International Microwave Symposium?

NXP Semiconductors N.V. has opened registration for its first-ever High Performance RF Design Challenge, encouraging RF engineers and students around the world to submit creative application ideas for RF power devices.

RF power transistors have traditionally been used in telecoms, aerospace and broadcast infrastructure, as well as various industrial, scientific and medical applications. As RF LDMOS technology has grown to be more powerful, rugged and cost-effective, it has enabled exciting new applications such as RF-driven lamps. The NXP HPRF Design Challenge will award prizes to design entries based on criteria including creativity, design efficiency, usefulness, originality and proof of concept. Prizes worth $25,000 include an all-expenses-paid trip to the 2011 MTT-S International Microwave Symposium in Baltimore, Maryland, U.S. and the Grand Prize will include a $3,000 Apple Store voucher.

The Design Challenge will take place in three phases: Phase I, Conceptual Design scheduled to run from January 10, 2011 to February 20, 2011; Phase II, Hardware Design from February 28, 2011 to April 24, 2011; And Phase III, Prototype from May 2, 2011 to May 29, 2011.

The first phase requires an initial design, including an abstract, title and block diagram. Contestants shall receive a free HPRF Design Challenge kit once a valid entry has been submitted.

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