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LSA system tips ms annealing for 28nm node

Posted: 14 Jan 2011 ?? ?Print Version ?Bookmark and Share

Keywords:laser annealing system? 28nm? manufacturing?

Ultratech Inc. unveils a new field-tested laser spike annealing (LSA) system that enables millisecond annealing applications for the 28nm node and beyond.

The LSA101 features a new design of coherent optics which generates a longer, more focused laser beam at the wafer plane, providing the capability to increase throughput by approximately 200 percent compared to its predecessor, the LSA100A. This improvement in throughput is claimed to correspond to a 65 percent reduction in cost of ownership.

Also, the system extends the ability to decrease the annealing time by about a factor of two compared to the LSA100A, which has been demonstrated to be critical for stress reduction in advanced technology nodes where many IC manufacturers are using aggressive strain engineering. The LSA101 is being qualified for 28nm production by a customer in Asia.

Jeff Hebb, VP of laser product marketing at Ultratech, said that the LSA101 can be operated in optimal throughput mode, where the wafer is annealed with half as many laser scans with only a modest impact on within-wafer uniformity. In this mode, the tool delivers a throughput of 60Wph, the highest in the industry for millisecond annealing tools.

The LSA101 also has a wider operating range for annealing time, or dwell time, which is critical for stress management in advanced devices. The LSA101 has a minimum dwell time of 200s compared to 400s of the LSA100A.

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