Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
?
EE Times-Asia > RF/Microwave
?
?
RF/Microwave??

Single stage 5-6 GHz WLAN LNA with BFU730F

Posted: 07 Feb 2011 ?? ?Print Version ?Bookmark and Share

Keywords:BFU730F? SiGe:C? BiCmos? silicon germanium process?

The BFU730F is a discrete HBT that is produced using NXP Semiconductors' advanced 110 GHz fT SiGe:C BiCmos process. SiGe:C is a normal silicon germanium process with the addition of Carbon in the base layer of the NPN transistor. The presence of carbon in the base layer suppresses the boron diffusion during wafer processing. This allows steeper and narrower SiGe HBT base and a heavier doped base. As a result, lower base resistance, lower noise and higher cut off frequency can be achieved.

The BFU730F is one of a series of transistors made in SiGe:C. BFU710F; BFU760 and BFU790 are the other types, BFU710 is intended for ultra low current applications. The BFU760F and BFU790F are high current types and are intended for application where linearity is key. The BFU7XXF are ideal in all kind of applications where cost matters. It also gives design flexibility.

View the PDF document for more information.





Article Comments - Single stage 5-6 GHz WLAN LNA with B...
Comments:??
*? You can enter [0] more charecters.
*Verify code:
?
?
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

?
?
Back to Top