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Synopsys, Varian team on TCAD model development

Posted: 15 Feb 2011 ?? ?Print Version ?Bookmark and Share

Keywords:Technology CAD models? cryogenic ion implantation? TCAD?

Synopsys and Varian Semiconductor Equipment Associates are collaborating on the development of Technology CAD (TCAD) models that will enable cryogenic ion implantation, a technique to reduce leakage in leading-edge logic and memory devices.

Both companies claim that the TCAD Sentaurus models derived from their collaborative work will speed up process development of advanced CMOS and memory technologies, and reduce process development cost and time-to-market.

As part of this collaboration, Synopsys said it will use experimental data from Varian's cryogenic implant process to develop and calibrate models for its TCAD Sentaurus tools.

"Today semiconductor manufacturers face tremendous challenges in improving device performance, achieving high product yield, reducing process R&D costs and meeting time-to-market targets. Therefore, it is increasingly critical for simulation to support novel process techniques to reduce technology development time and cost," stated Dr. Yuri Erokhin, senior director for strategic technologies at Varian.

Erokhin continued: "Cryogenic ion implant has been proven to significantly improve transistor performance and is a key enabler in the manufacture of advanced devices. This collaboration with Synopsys will enable our mutual customers to explore and optimize the cryogenic implant process with simulation, reducing time-to-market."

Back in 2005, Synopsys announced the addition of Varian's ion implantation process data to its Sentaurus Calibration Library.

By incorporating the Varian Semiconductor data, Synopsys then said it had increased the predictability and accuracy of TCAD process simulation for advanced ultra-shallow junction (USJ) CMOS technology, allowing semiconductor manufacturers to reduce the overall cost and time for product development.

Anne-Fran?oise Pele
EE Times

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