Bipolar power transistor increases current capability 50%

STMicroelectronics NV rolls the 3STR1630 as the first member of a new family of bipolar power transistors. The transistors offer a combination of high current capability, collector-emitter blocking voltage and ultralow collector-emitter saturation voltage. They are suited for use in LED drives, motor and relay drives and DC-DC converters.

The device is an NPN transistor made using a new low-voltage planar technology that incorporates a double-metal process allowing the cell density to be almost doubled without requiring the use of photolithography equipment.

The double-metal process also enables transistors with Vceo ratings up to 100V, higher working switching frequencies (up to 300kHz), and a 40 percent reduction in Vce(sat).

The 3STR1630 has a minimum BVCEO of 30V, offering a compromise between a 28V blocking voltage capability and minimum Vce(sat), with an equivalent on-resistance of only 100mΩ at hFE figure of 50. In addition, it can handle a continuous current as high as 6A while being housed in a small outline SOT-23 package.

The 3STR1630 is now in full production and is available at $0.24 in quantities of 1,000.