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JSR, IBM launch self-assembly litho structure

Posted: 04 Mar 2011 ?? ?Print Version ?Bookmark and Share

Keywords:DSA? half-pitch node? nano-imprint lithography?

As part of its research agreement with IBM Corp., JSR Corp. and U.S.-based affiliate JSR Micro Inc. have developed and launched a new directed self-assembly (DSA) technology targeted at the sub-20nm half-pitch node. The new process eliminates dual exposure steps and works well with conventional 193nm lithography equipment.

At SPIE last year, more than 10 papers on the conference schedule focused on DSA, a technology that combines lithographically defined substrates and self-assembled polymers. Research has focused on using lithography to alter the surface of a silicon wafer, then adding block co-polymers that assemble themselves into regular arrays along the defined pattern.

DSA first landed on the International Technology Roadmap for Semiconductors (ITRS) in 2007 as a potential solution for leading-edge, critical layer lithography. The technology is still part of the ITRS as of the 2009 edition.

Still in the R&D stage, DSA is aimed at a range of devices, such as cylindrical patterns, vertical cylindrical patterns, nanowire arrays, FinFETs, among others, according to a paper from IBM at SPIE.

One of the first applications appears to be the fabrication of a replicator in nano-imprint lithography. With a DSA-enabled replicator, nano-imprint can be used for bit-pattern media applications in disk drives, according to IBM.

The continuing growth of the semiconductor industry and shrinking design nodes have spurred the development of new innovative lithography patterns. Using a proprietary polymer system that differs from existing and widely used block co-polymer technology, this newly designed structure from JSR and IBM have shown good test results for 22nm half-pitch patterning and allows for phase separation, resulting in good profiles and more flexible use in both logic and memory applications.

"This DSA technology is a highly viable solution for the key sub-20nm half-pitch threshold where it can become complementary to prevailing technologies such as EUV," said JSR Micro president, Eric R. Johnson, in a statement. "We see the potential for its integration with a broad application set and are committed to our ongoing relationship with IBM to develop impacting lithography technologies."

Details of the DSA technology will be presented in a paper at the SPIE Advanced Lithography Symposium.

- Mark LaPedus
??EE Times





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