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Compact MOSFETs boast lowest on-resistance profile

Posted: 04 Mar 2011 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFETs? n-channel? p-channel?

Vishay Intertechnology Inc. has introduced a 30V n-channel and 20V p-channel TrenchFET power MOSFETs in the thermally enhanced Thin PowerPAK SC-70 package with an ultra-low 0.6 mm profile.

The SiA444DJT claims to have the lowest profile for an n-channel MOSFET in the 2mm by 2mm footprint area, while the SiA429DJT offers the lowest on-resistance for a p-channel device with a sub-0.8mm profile to date.

The SiA444DJT's targets handheld devices that require an n-channel MOSFET that is thinner than the standard 0.8mm. It offers low on-resistance of 17 milliohms at 10V and 22 milliohms at 4.5V, as well as the lowest maximum on-resistance multiplied by gate charge producta key figure of merit for MOSFETs in DC/DC converter applicationsof 170 milliohms-nC at 10V and 110 milliohms-nC at 4.5V.

If a thinner p-channel is needed, the SiA429DJT provides a low on-resistance of 20.5 milliohms at 4.5V, 27 milliohms at 2.5V, 36 milliohms at 1.8V, and 60 milliohms at 1.5V. The device's on-resistance at 1.8V is lower compared to other competing devices, including MOSFETs with the standard 0.8mm profile and all 2mm by 2mm p-channel MOSFETs. The lower on-resistance of the SiA429DJT and SiA444DJT translates into lower conduction losses, thus prolonging battery life between charges of handheld electronics.

The ultra-slim Thin PowerPAK SC-70 package of the SiA444DJT and SiA429DJT is optimized for small handheld electronics, including cellphones, smartphones, MP3 players, digital cameras, eBooks, and tablet PCs. In these devices, the SiA444DJT will be used for high-frequency DC/DC converters, while the SiA429DJT can be used as a load switch or charger switch and can also be used as a high-side switch in DC/DC buck converter applications.

The MOSFETs are 100 % Rg tested and are halogen-free in accordance with IEC 61249-2-21 and compliant to RoHS directive 2002/95/EC.

Samples and production quantities of the new SiA444DJT and SiA429DJT TrenchFET power MOSFETs are available now, with lead times of 12 to 14 weeks for larger orders.





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