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GaN-on-silicon LEDs tip 135lumens/W

Posted: 11 Mar 2011 ?? ?Print Version ?Bookmark and Share

Keywords:GaN? silicon? LED? solid-state lighting?

Bridgelux Inc. demonstrates a 135lumens/W GaN-on-silicon based LED technology, the industry's first commercial grade performance for a Silicon-based LED.

Most LED epitaxial wafers use sapphire or silicon carbide substrates as the starting material when they are grown at scale. However, large diameter sapphire and silicon carbide substrates are expensive, difficult to process, and are not readily available. Thus, production costs have inhibited the adoption of LED lighting in homes and commercial buildings. But now the Bridgelux technology for growing GaN on larger, low-cost silicon wafers that are compatible with modern semiconductor manufacturing delivers a 75 percent improvement in cost.

The 135lumen/W performance was achieved at a CCT of 4730K using a single 1.5mm power LED operated at 350mA. These LEDs have extremely low operating voltages, require only 2.9V at 350mA and voltage and excellent thermal resistance of the devices make them suited for high-performance, illumination-grade applications. Optimization of the epitaxy process on 8-inch Si wafers will make LED manufacturing compatible with existing automated semiconductor lines.

The move to a Silicon substrate will be a revolutionary step for the LED industry. The GaN-on-silicon performance levels reported by Bridgelux today are comparable to sapphire-based LEDs available 12-24 months ago. The company anticipates the delivery of its first commercially available GaN-on-silicon products over the course of the next two to three years.

The company is currently in discussions with semiconductor companies on the use of the many fully depreciated 8-inch semiconductor fabrication operations available around the globe.

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