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Bridgelux says GaN-on-Si LED capable of 135 lumens

Posted: 15 Mar 2011 ?? ?Print Version ?Bookmark and Share

Keywords:GaN-on-Si? epitaxial wafer? lumen? epitaxy?

Bridgelux Inc. is bullish on the future of its GaN-on-Si LED, which it claimed successfully demonstrated an output of 135 lumens of light per watt, making it the first silicon substrate LED capable of commercial-grade output.

The semiconductor technology developer for solid-state lighting, however, cautioned that applications using the technology may still be two to three years down the road.

California-based Bridgelux has raised some $110 million in venture capital since its founding in 2002. While most epitaxial wafers for LED use sapphire or silicon carbide substrates as the starting material, large-diameter sapphire and silicon carbide substrates are expensive and more difficult to process. Gallium nitride grown on low-cost silicon wafers that come in 150mm, 200mm and 300mm diameters are a viable alternative as it offers a 75 percent cost reduction, the company said.

Bridgelux said it used a single 1.5mm diameter LED operated at 350mA with a color correlated temperature of 4730K to achieve the 135-lumen output. The LEDs require 2.9V at 350mA and less than 3.25V at 1A. The company believes that it will be able to optimize the epitaxy process on 200mm-diameter silicon wafers.

"The significantly reduced cost-structures enabled by Silicon-based LED technology will continue to deliver dramatic reductions in the up-front capital investment required for solid state lighting," Bridgelux CEO Bill Watkins said in a statement. "In as little as two to three years, even the most price-sensitive markets, such as commercial and office lighting, residential applications, and retrofit lamps will seamlessly and rapidly convert to solid-state lighting."

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