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Schottky diodes boast low forward voltage

Posted: 04 Apr 2011 ?? ?Print Version ?Bookmark and Share

Keywords:diode? silicon carbide? SC1xxAGC series?

ROHM Semiconductor has released the SCS1xxAGC series of silicon carbide (SiC) Schottky barrier diodes (SBD). These SiC diodes offers low-forward voltage and fast recovery time to improve power conversion efficiency in applications such as PFC/power supplies, solar panel inverters, uninterruptible power supplies, air conditioners and others.

The SCS1xxAGC series maintains low forward voltage over a wide operating temperature range which results in lower power dissipation under actual operating conditions. For example, the 10A rated part has a VF of 1.5V at 25C and 1.6V at 150C. Low VF reduces conduction loss while the ultra-short reverse recovery time (15ns, typical) enables high-speed switching and minimizes switching loss.

With the acquisition of SiCrystal AG, ROHM Semiconductor has manufacturing capability for SiC semiconductors from ingot formation to power device fabrication. This allows the rapid development of advanced products and complete control of raw materials for reliability and quality.





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