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Toshiba takes 24nm route for NAND flash

Posted: 11 Apr 2011 ?? ?Print Version ?Bookmark and Share

Keywords:SmartNAND. 24nm products? NAND? 24nm process?

Toshiba Corp. is set to unveil SmartNAND, its newest family of NAND flash memories produced using the 24nm process technology. Available in 4- to 64GB densities, the series combines NAND flash memory with a control IC that can perform error checking and correction (ECC).

This is presumably in packages that contain multiple die as 64Gb (not byte) represents a benchmark of monolithic integration at the 2X-nm node.

SmartNAND is designed to remove the burden of ECC from the host processor. However, no mention was made by Toshiba of the read-write cycling endurance although the company did say that managing bit errors is essential for digital products to maintain acceptable levels of performance and reliability.

The SmartNAND 24nm products are replacements for current 32nm generation devices. The integrated ECC and the use of leading-edge 24nm process technology allow for enhanced speed performance, specifically 1.9x faster read speed and 1.5x faster write speed than the current lineup. Toshiba's SmartNAND offers a range of read and write speeds to vary optimized speed performance; the read speed is available in four options and the write speed in two. Power-save mode is also available for lower-power requests.

The components have a standard NAND flash memory interface and 8KB page size, and come in 48-pin TSOP (12 x 20 x 1.2mm) and 52-land LGA (14 x 18 x 1.0mm) packages. Samples of the new SmartNAND family will be available in mid-April while mass production will begin 2Q11 with some memories becoming available in 3Q11 and 4Q11.

- Peter Clarke
??EE Times





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