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TowerJazz SiGe process enables high-speed interfaces

Posted: 29 Apr 2011 ?? ?Print Version ?Bookmark and Share

Keywords:SiGe foundry process? 0.18µm SiGe? high-speed interfaces?

TowerJazz Inc. has unveiled its newest silicon germanium (SiGe) foundry process. SBC18H3, the specialty foundry vendor's third-generation 0.18?m SiGe technology, provides transistors with 240GHz Ft and 260GHz Fmax.

The technology is built on the same platform used for the prior two TowerJazz SiGe processes. The new process addresses next-generation needs for high-speed interfaces in communication protocols such as Thunderbolt, optical fiber and high-data rate wireless by improving performance while reducing noise and power consumption of key building blocks. SBC18H3 also targets applications such as automotive collision avoidance systems, millimeter-wave radar and GHz imaging.

SBC18H3 process design kits (PDKs) include mm-wave components important for high-speed designs such as a transmission-line toolbox, p-i-n diodes for RF switching and support for small-size MIM capacitors.

Tower Semiconductor Ltd, a specialty foundry chipmaker which trades under the name TowerJazz, recently announced it is proposing to buy a wafer fab belonging to Micron Technology Inc. in Nishiwaki City, Hyogo prefecture, Japan, for $140 million.

- Mark LaPedus
??EE Times

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