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Standard power modules deliver fast switching frequencies

Posted: 23 May 2011 ?? ?Print Version ?Bookmark and Share

Keywords:standard? power modules? silicon carbide?

Microsemi Corp. has announced the expansion of its line of standard power modules to include a product that uses silicon carbide (SiC) devices for all diode and normally-off junction field effect transistor (JFET) functionality.

"SiC technology is becoming increasingly important for improving system power performance and density while reducing product size and cooling requirements," said Philippe Dupin, director for power module groups of Microsemi Corp. He added, "We are now extending our line of all-SiC power modules beyond custom solutions to include standard products that reduce costs and time to market for our customers."

Microsemi's APTJC120AM13VCT1AG phase leg SiC power module provides customers with a higher-performance alternative to the company's extensive line of all-silicon solutions. The company claims that it operates at considerably higher rated junction temperatures than solutions using silicon IGBT and MOSFET devices, with switching losses that are 10 percent lower than modules with silicon MOSFETs, and 40 percent lower than those that incorporate silicon IGBTs. The modules also enable the development of welding converters, switched mode and uninterruptible power supplies, and motor control systems used in solar, automotive, military/aerospace, medical and other demanding applications.

Microsemi's phase leg SiC power module provides low stray inductance, high integration levels and low junction-to-case thermal performance. It uses four 30 A diodes and eight 50 milliohm JFETs and is rated at 1200 V but has an on-state resistance, or RDS(on) of 13 milliohms. The power module is RoHS-compliant and housed in a low-profile, isolated package with direct mounting to a heatsink.

The APTJC120AM13VCT1AG phase leg SiC power module is scheduled to begin in the third quarter of 2011.

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