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Radiation-hardened MOSFETs target satellites, launchers

Posted: 10 Jun 2011 ?? ?Print Version ?Bookmark and Share

Keywords:radiation-hardened? MOSFET? power transistors?

STMicroelectronics has introduced a family of power MOSFETs that are fully qualified for use in electronic subsystems on board satellites and launchers. The MOSFETs are ST's answer to the growing world demand for satellite-based communications, television, weather forecasting and geographical data.

The radiation-hardened power MOSFET family spans current ratings from 6C80A and comprises five N-channel and P-channel devices, including: the STRH100N10 and STRH8N10 and STRH40P10, which offer voltage ratings of 100V; and the STRH100N6 and STRH40N6 with voltage ratings of 60V. The 100V P-channel device has a current rating of 34A. With their low gate charge, the MOSFETs are ideal for use in DC power modules such as motor controllers and linear regulators, as well as line switches and e-fuses for current limiting.

Major features of the ST space-qualified power MOSFETs are: 1) fast switching performance; 2) 100 percent avalanche tested; 3) hermetically sealed package; 4) withstands 70/100krad Total Ionizing Dose (TID); and 5) SEE radiation hardened.

The STRHxxxN10, STRHxxxN6 and STRH40P10 family are available now to Engineering Model or ESCC flight quality level, in TO254-AA and TO-39 through-hole packages. An SMD.5 surface-mount configuration is also offered. The STRH100N10 is qualified to the ESCC 5205/021 specification and the other products are expected to be ESCC qualified in H2 2011.

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